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Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions

✍ Scribed by Polyakov, A. Y. ;Smirnov, N. B. ;Govorkov, A. V. ;Kozhukhova, E. A. ;Pearton, Stephen J. ;Ren, Fan ;Liu, Lu ;Johnson, J. W. ;Lim, Wantae ;Kolin, N. G. ;Veryovkin, S. S. ;Ermakov, V. S.

Book ID: 126816727
Publisher: AVS (American Vacuum Society)
Year: 2012
Tongue: English
Weight: 977 KB
Volume: 30
Category: Article
ISSN: 1520-8567
DOI: 10.1116/1.4766727

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## Abstract Nanosecond‐pulsed current–voltage measurements were used to study hot‐electron transport in undoped AlGaN/GaN and AlGaN/AlN/GaN two‐dimensional electron gas channels biased up to 200 kV/cm. Voltage pulses of 1 ns were applied in order to minimize channel heating. The current saturated a