𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Band structure and high-pressure phase transition in GaN, AlN, InN and BN

✍ Scribed by I. Gorczyca; N.E. Christensen

Book ID
103937549
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
366 KB
Volume
185
Category
Article
ISSN
0921-4526

No coin nor oath required. For personal study only.

✦ Synopsis

The linear muffin-tin orbital method is used to calculate the band structure and to investigate the structural properties of III-V nitrides under high pressure. The obtained pressure coefficients of energy gaps, dielectric constants, bulk moduli and phase transition pressures are compared with existing theoretical and experimental data.

πŸ“œ SIMILAR VOLUMES

Full-potential electronic structure calc
Full-potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk
✍ Lakdja, A. ;Bouhafs, B. ;Ruterana, P. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 406 KB

## Abstract The electronic structures of a monolayer quantum well (MLQW) in GaN are investigated by means of the first‐principles full potential linearized augmented plane waves method within the local density approximation (LDA). A super‐cell with periodic boundaries is used to study such systems.