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AlN, GaN and InN (0 0 1) surface electronic band structure

✍ Scribed by M.E. Mora-Ramos; V.R. Velasco


Book ID
108279371
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
543 KB
Volume
600
Category
Article
ISSN
0039-6028

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Origins of GaN(0 0 0 1) s
✍ S VΓ©zian; F Semond; J Massies; D.W Bullock; Z Ding; P.M Thibado πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 448 KB

The reconstructions of the Ga polarity GaN(0 0 0 1) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Various reconstructions are o