✦ LIBER ✦

Theory and measurements of flip-chip interconnects for frequencies up to 100 GHz

✍ Scribed by Jentzsch, A.; Heinrich, W.

Book ID: 114554083
Publisher: IEEE
Year: 2001
Tongue: English
Weight: 282 KB
Volume: 49
Category: Article
ISSN: 0018-9480
DOI: 10.1109/22.920143

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Air Cavity Transmission Lines for Off-Ch

Air Cavity Transmission Lines for Off-Chip Interconnects Characterized to 40 GHz

✍ Spencer, T.J.; Saha, R.; Jikai Chen; Bashirullah, R.; Kohl, P.A. 📂 Article 📅 2012 🏛 Institute of Electrical and Electronics Engineers 🌐 English ⚖ 1010 KB

Condition and prospects of metrological

Condition and prospects of metrological provisions for the uniformity of voltage measurements at frequencies up to 3 GHz

✍ A. M. Fedorov; V. V. Krestovskii; V. A. Shcheglov 📂 Article 📅 1979 🏛 Springer US 🌐 English ⚖ 288 KB

Reference equipment for measuring capaci

Reference equipment for measuring capacitance and inductance at frequencies up to 100 MHz

✍ É. A. Abrosimov; N. A. Lazareva; O. Ya. Maloshenko 📂 Article 📅 1969 🏛 Springer US 🌐 English ⚖ 94 KB

Contraction stress build-up of anisotrop

Contraction stress build-up of anisotropic conductive films (ACFs) for flip-chip interconnection: Effect of thermal and mechanical properties of ACFs

✍ Woon-Seong Kwon; Kyung-Wook Paik 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 255 KB 👁 1 views

Technique for measuring the frequency‐de

Technique for measuring the frequency‐dependent complex dielectric constants of liquids up to 20 GHz

✍ Wei, Yan‐Zhen; Sridhar, S. 📂 Article 📅 1989 🏛 American Institute of Physics 🌐 English ⚖ 810 KB

Characterization and modeling of stacked

Characterization and modeling of stacked MIM on-chip capacitors with high-capacitance density up to 20 GHz frequency region

✍ Hyunwon Moon; Sunil Yu; Seong-Sik Song; Ilku Nam 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 348 KB

## Abstract In this article, double‐stacked and triple‐stacked metal‐insulator‐metal (MIM) capacitors fabricated in 0.18 μm CMOS process are reported. These provide high‐capacitance density of 2 fF/μm^2^ and 3.2 fF/μm^2^ and excellent dc and RF characteristics, respectively. The lumped circuit mode