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Theoretical study of the response of InGaAs metal-semiconductor-metal photodetectors

✍ Scribed by Salem, A.F.; Brennan, K.F.


Book ID
117868031
Publisher
IEEE
Year
1995
Tongue
English
Weight
1011 KB
Volume
31
Category
Article
ISSN
0018-9197

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## Abstract The optoelectronic mixing effect in InAlAs Schottky‐enhanced InGaAs‐based metal‐semiconductor‐metal photodetectors (MSM‐PDs) is analyzed. The measured frequency bandwidth of the optoelectronic mixer (OEM) is less than that of a corresponding photodetector. The mixing efficiency depends