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Performance of InGaAs metal-semiconductor-metal photodetectors on Si

✍ Scribed by Bartels, A.; Peiner, E.; Tang, G.-P.; Klockenbrink, R.; Wehmann, H.-H.; Schlachetzki, A.


Book ID
119785423
Publisher
IEEE
Year
1996
Tongue
English
Weight
348 KB
Volume
8
Category
Article
ISSN
1041-1135

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Design, structure growth, fabrication, and characterization of high performance AlGaN-based metal-semiconductor-metal (MSM) photodetectors (PD) are reported. By incorporating AlN nucleation and buffer layers, the leakage current density of GaN MSM PD was reduced to 1.96 Â 10 À10 A/cm 2 at a 50 V bia