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High-performance large-area InGaAs metal-semiconductor-metal photodetectors

✍ Scribed by Hieronymi, F.; Bottcher, E.H.; Droge, E.; Kuhl, D.; Bimberg, D.

Book ID
119783940
Publisher
IEEE
Year
1993
Tongue
English
Weight
456 KB
Volume
5
Category
Article
ISSN
1041-1135

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Design, structure growth, fabrication, and characterization of high performance AlGaN-based metal-semiconductor-metal (MSM) photodetectors (PD) are reported. By incorporating AlN nucleation and buffer layers, the leakage current density of GaN MSM PD was reduced to 1.96 Γ‚ 10 Γ€10 A/cm 2 at a 50 V bia