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Analysis of the mixing effect in InAlAs/InGaAs metal-semiconductor-metal photodetectors

✍ Scribed by K. Aliberti; B. Stann; S. Svensson; R. Mehandru; F. Ren; H. Shen

Publisher: John Wiley and Sons
Year: 2003
Tongue: English
Weight: 116 KB
Volume: 39
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.11141

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✦ Synopsis

Abstract

The optoelectronic mixing effect in InAlAs Schottky‐enhanced InGaAs‐based metal‐semiconductor‐metal photodetectors (MSM‐PDs) is analyzed. The measured frequency bandwidth of the optoelectronic mixer (OEM) is less than that of a corresponding photodetector. The mixing efficiency depends on the light‐modulation, local‐oscillator, and mixed‐signal frequencies and decreases nonlinearly with a decrease in optical power. We present a circuit model of the OEM to explain the experimental results. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 108–112, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11141

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