Theoretical study of N-face InGaN light-emitting diodes with GaN–InGaN–GaN barrier near p-side and n-side

✍ Scribed by Yang, G.F.; Dong, K.X.; Zhu, H.X.; Guo, Y.; Yan, D.W.; Wang, F.X.; Li, G.H.; Gao, S.M.

• Book ID: 121456458
• Publisher: Elsevier Science
• Year: 2014
• Tongue: English
• Weight: 964 KB
• Volume: 65
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/j.spmi.2013.10.028