Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing

Effect of coalescence layer thickness on

Effect of coalescence layer thickness on the properties of thin-chip InGaN/GaN light emitting diodes with embedded photonic quasi-crystal structures

✍ Shields, Philip A. ;Charlton, Martin D. B. ;Lewins, Christopher J. ;Gao, Xiang ; 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 379 KB

## Abstract The simulation, fabrication and optical characterization of InGaN/GaN MQW‐LEDs grown by MOVPE over embedded photonic quasi‐crystals (PQCs) are reported. Fully coalesced GaN layers as thin as 140 nm were grown over 1200 nm high air‐gap PQCs using an intermittent pulsed/normal growth meth