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Theoretical studies on the growth mechanisms of silicon thin films by atomic layer epitaxy

✍ Scribed by Pipsa Hirva; Tapani A. Pakkanen


Publisher
Elsevier Science
Year
1989
Weight
45 KB
Volume
220
Category
Article
ISSN
0167-2584

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A1203-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900Β°C resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densification did not significantly i