The electron energy levels in doped nonabrupt GaAs/Al x Ga 1-x As single quantum wells 100 Å wide are calculated. Interface widths varying from zero to four GaAs unit cells are taken into account, as well as band bendings of 0-90 meV. It is shown that interface effects on the energy levels are impor
✦ LIBER ✦
Theoretical investigations for zinc blende–wurtzite polytypism in GaAs layers at Au/GaAs(1 1 1) interfaces
✍ Scribed by Yuya Haneda; Toru Akiyama; Kohji Nakamura; Tomonori Ito
- Book ID
- 108060491
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 264 KB
- Volume
- 254
- Category
- Article
- ISSN
- 0169-4332
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