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Theoretical analysis of the breakdown voltage in pseudomorphic HFETs

✍ Scribed by Eisenbeiser, K.W.; East, J.R.; Haddad, G.I.


Book ID
114536599
Publisher
IEEE
Year
1996
Tongue
English
Weight
799 KB
Volume
43
Category
Article
ISSN
0018-9383

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The a¨alanche channel breakdown in HFETs is studied by means of a quasi-two-dimensional simulation. The influence of the gate recess parameters is analyzed for different structures, considering both the breakdown ¨oltage and the microwa¨e performance. Accurate predictions can be obtained, in particu