To investigate the strain characteristics of InAs quantum dots grown on (001) GaAs by solid source molecular beam epitaxy we have compared calculated transition energies with those obtained from photoluminescence measurements. Atomic force microscopy shows the typical lateral size of the quantum dot
✦ LIBER ✦
Theoretical analysis of strain and strain decay in InAsâGaAs(001) multilayer quantum dot growth
✍ Scribed by TomicÌ, S.; Howe, P.; Harrison, N. M.; Jones, T. S.
- Book ID
- 121218745
- Publisher
- American Institute of Physics
- Year
- 2006
- Tongue
- English
- Weight
- 859 KB
- Volume
- 99
- Category
- Article
- ISSN
- 0021-8979
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