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Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots

✍ Scribed by Wang-Min, Zhou; Chong-Yu, Wang; Yong-Hai, Chen; Zhan-Guo, Wang

Book ID
121412910
Publisher
Institute of Physics
Year
2006
Tongue
English
Weight
251 KB
Volume
15
Category
Article
ISSN
1009-1963

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Strain and optical transitions in InAs quantum dots on (001) GaAs
✍ Y Fu; F Ferdos; M Sadeghi; Q.X Zhao; S.M Wang; A Larsson πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 218 KB

To investigate the strain characteristics of InAs quantum dots grown on (001) GaAs by solid source molecular beam epitaxy we have compared calculated transition energies with those obtained from photoluminescence measurements. Atomic force microscopy shows the typical lateral size of the quantum dot