The use of GaAs—(Ga, Al)As heterostructures for FET devices

✍ Scribed by Boccon-Gibod, D.; Andre, J.-P.; Baudet, P.; Hallais, J.-P.

• Book ID: 114593435
• Publisher: IEEE
• Year: 1980
• Tongue: English
• Weight: 988 KB
• Volume: 27
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1980.19997