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The use of cavities for gettering in silicon microelectronic devices

✍ Scribed by S.E. Donnelly; V.M. Vishnyakov; G. Carter; J. Terry; L.I. Haworth; P. Sermanni; R.C. Birtcher


Book ID
114167115
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
151 KB
Volume
206
Category
Article
ISSN
0168-583X

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Atomic layer deposition of tantalum oxid
✍ A. Lintanf-SalaΓΌn; A. Mantoux; E. Djurado; E. Blanquet πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 573 KB

Atomic Layer Deposition (ALD) was used for the deposition of tantalum oxide thin films in order to be integrated in microelectronic devices as barrier to copper diffusion. The influence of deposition temperature, number of cycles and precursor pulse time on the film growth was discussed. The conform