The use of advanced 3D surface metrology for the characterisation of epi-wafers and Si structures
β Scribed by L. Blunt; J. Armstrong; R. Blunt
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 910 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1862-6351
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Characterization of the inactive clusters formed by high dose implantation silicon are one of the crucial topics in the semiconductor industry. Analytical techniques, which could provide quantitative information on the detailed description of the complexes that are formed at dopant concentrations ab
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