✦ LIBER ✦

The transfer-impedance method for noise in field-effect transistors

✍ Scribed by K.M. van Vliet

Publisher: Elsevier Science
Year: 1979
Tongue: English
Weight: 307 KB
Volume: 22
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(79)90026-1

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Equivalence of the Langevin method and t

Equivalence of the Langevin method and the impedance-field method of calculating noise in devices

✍ T.C. McGill; M.-A. Nicolet; K.K. Thornber 📂 Article 📅 1974 🏛 Elsevier Science 🌐 English ⚖ 204 KB

Effects of electron bombardment on the n

Effects of electron bombardment on the noise in junction gate field effect transistors

✍ I.N. Krishnan; T.M. Chen 📂 Article 📅 1973 🏛 Elsevier Science 🌐 English ⚖ 650 KB

Limits on the power-law exponent for fie

Limits on the power-law exponent for field-effect transistor transfer characteristics

✍ R.D. Middlebrook; I. Richer 📂 Article 📅 1963 🏛 Elsevier Science 🌐 English ⚖ 260 KB

Functional Self-Assembled Monolayers for

Functional Self-Assembled Monolayers for Optimized Photoinduced Charge Transfer in Organic Field Effect Transistors

✍ B. Park; P. Paoprasert; I. In; J. Zwickey; P. E. Colavita; R. J. Hamers; P. Gopa 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 425 KB 👁 2 views

Monitoring the Channel Formation in Orga

Monitoring the Channel Formation in Organic Field-Effect Transistors via Photoinduced Charge Transfer

✍ Thokchom Birendra Singh; Robert Koeppe; Niyazi Serdar Sariciftci; Mauro Morana; 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 365 KB 👁 2 views

Noise of hot carriers in the channel of

Noise of hot carriers in the channel of n silicon junction gate field effect transistors

✍ J.P. Nougier; D. Sodini; M. Rolland; D. Gasquet; G. Lecoy 📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 568 KB