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The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers

✍ Scribed by Rees, P.; Blood, P.; Vanhommerig, M. J. H.; Davies, G. J.; Skevington, P. J.

Book ID
115535520
Publisher
American Institute of Physics
Year
1995
Tongue
English
Weight
668 KB
Volume
78
Category
Article
ISSN
0021-8979

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SIMS analysis of InP, GaAs and InGaAs la
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## Abstract SIMS analysis was applied to the characterization of InP, GaAs and InGaAs grown by chemical beam expitaxy (CBE). It includes the control of purity and doping, and the determination of growth rate and matrix composition. Some important characteristics of CBE growth, such as carbon incorp