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Growth temperature-dependent conduction-type inversion of C-doped InGaAs grown by chemical beam epitaxy

✍ Scribed by Jeong-Rae Ro; Sung-Bock Kim; Seong-Ju Park; El-Hang Lee


Book ID
108342374
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
389 KB
Volume
175-176
Category
Article
ISSN
0022-0248

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