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The temperature dependence of band-to-band Auger recombination in silicon

✍ Scribed by Huldt, L.; Nilsson, N. G.; Svantesson, K. G.


Book ID
120818287
Publisher
American Institute of Physics
Year
1979
Tongue
English
Weight
367 KB
Volume
35
Category
Article
ISSN
0003-6951

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Auger recombination in silicon nanocryst
✍ Mahdouani, M. ;Bourguiga, R. ;Jaziri, S. ;Gardelis, S. ;Nassiopoulou, A. G. πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 410 KB

## Abstract We calculate the ground and excited electron and hole levels in spherical Si nanocrystals (quantum dots) embedded within SiO~2~ in a multiband effective mass approximation. The obtained energies of electron and hole are used to estimate the Auger Recombination (AR) lifetime in Si Nanocr