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Auger recombination in silicon nanocrystals embedded in SiO2wide band-gap lattice

✍ Scribed by Mahdouani, M. ;Bourguiga, R. ;Jaziri, S. ;Gardelis, S. ;Nassiopoulou, A. G.

Publisher: John Wiley and Sons
Year: 2008
Tongue: English
Weight: 410 KB
Volume: 205
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200880223

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✦ Synopsis

Abstract

We calculate the ground and excited electron and hole levels in spherical Si nanocrystals (quantum dots) embedded within SiO~2~ in a multiband effective mass approximation. The obtained energies of electron and hole are used to estimate the Auger Recombination (AR) lifetime in Si Nanocrystals (NCs). The excited electron, excited hole and biexciton AR types are considered. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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