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Band-to-band auger recombination in indirect gap semiconductors

✍ Scribed by Huldt, L.

Publisher: John Wiley and Sons
Year: 1971
Tongue: English
Weight: 732 KB
Volume: 8
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210080118

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## Abstract We calculate the ground and excited electron and hole levels in spherical Si nanocrystals (quantum dots) embedded within SiO~2~ in a multiband effective mass approximation. The obtained energies of electron and hole are used to estimate the Auger Recombination (AR) lifetime in Si Nanocr