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The study of structural properties of 100 keV hydrogen ion implanted semi-insulating GaAs single crystals

โœ Scribed by M Udhayasankar; J Kumar; P Ramasamy; K Sekar; B Sundaravel; C Ferrari; L Lazzarini; P Magudapathy; K.G.M Nair


Book ID
114170898
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
482 KB
Volume
149
Category
Article
ISSN
0168-583X

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On the Analysis of Hydrogen in as grown
โœ M. Udhayasankar; J. Kumar; P. Ramasamy; D.K. Avasthi; D. Kabiraj ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 139 KB ๐Ÿ‘ 2 views

Hydrogen detection and analysis was carried out on the undoped semi-insulating (S.I.) gallium arsenide (GaAs) single crystal using conventional elastic recoil detection analysis (ERDA) technique with high energy, heavy ion beam. Presence of hydrogen (nearly 3 x 10 20 atoms/cc) has been observed on t