Structural and mechanical properties of ion implanted GaAs and InP single crystals grown by the liquid encapsulated Czochralski technique

✍ Scribed by J. Arokiaraj; S. Arulkumaran; M. Udhaysankar; P. Santhanaraghavan; J. Kumar; P. Ramasamy; K.G.M. Nair; P. Magudapathy; N.S. Thampi; Kanwar Krishan

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 252 KB
• Volume: 28
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(94)90106-6