𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The study of hydrogenation effect for the deep levels in GaN epilayers

✍ Scribed by Yoon Shon; Nam Hwa Kim; Young Hae kwon; Deuk Young Kim; Shavkat U. Yuldashev; Woon Hyung Jung; Tae Won Kang

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
119 KB
Volume
1
Category
Article
ISSN
1567-1739

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

One more deep level related to the metas
One more deep level related to the metastable hydrogen-related defects in n-GaAs epilayers
✍ O.A. Soltanovich; E.B. Yakimov; E.V. Erofeev; V.A. Kagadei; J. Weber πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 236 KB

A deep trap with energy level at E C -0.45 eV is detected in n-type GaAs epilayers after hydrogenation. This level exhibits a bias-dependent annealing behaviour in the temperature range 290-400 K. The relation of this defect to the well-known metastable hydrogen-related M3/M4 defect is discussed.