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The structural and electrical properties of oriented films prepared by metal organic deposition method

✍ Scribed by Xiaofei Wang; Xiaomei Lu; Huifeng Bo; Yaoyang Liu; Yanchi Shen; Xiaobo Wu; Wei Cai; Yi Kan; Chao Zhang; Yunfei Liu; Fengzhen Huang; Jinsong Zhu

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 784 KB
Volume: 150
Category: Article
ISSN: 0038-1098
DOI: 10.1016/j.ssc.2010.06.035

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✦ Synopsis

Strontium titanate films with high a-axis orientation [a (100) = 94.1%] and random orientation were deposited on (111) Pt/Ti/SiO 2 /Si substrates by a concentration controlling of the precursor solution during the metal organic deposition process. Topography of samples was investigated by atomic force microscopy after annealing at 800 °C. X-ray diffraction found that the degree of a-axis orientation increased with increasing annealing temperature. The leakage current and the dielectric property were strongly dependent on the film orientation, and the possible causes of orientation dependence were discussed.

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