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The spectral dependence of the radiative recombination kinetics in compensated GaAs

โœ Scribed by Andreev, V. M. ;Ekimov, A. I. ;Garbusov, D. Z. ;Safarov, V. I.

Publisher
John Wiley and Sons
Year
1972
Tongue
English
Weight
246 KB
Volume
10
Category
Article
ISSN
0031-8965

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Temperature dependence of the radiative
Temperature dependence of the radiative recombination coefficient in GaAs๎—ธ(Al, Ga)As quantum wells
โœ G.W. 't Hooft; M.R. Leys; H.J. Talen-v.d. Mheen ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 281 KB

The temperature dependence of the radiative recombination coefficient of GaAs-(A1,Ga)As quantum wells grown by MO-VPE was investigated. This was done by measuring the minority carrier lifetime as deduced from photoluminescence decay. The experimental lifetime varies as Ta, where a equals 1.1 for sma