Temperature dependence of the radiative recombination coefficient in GaAs(Al, Ga)As quantum wells

✍ Scribed by G.W. 't Hooft; M.R. Leys; H.J. Talen-v.d. Mheen

• Publisher: Elsevier Science
• Year: 1985
• Tongue: English
• Weight: 281 KB
• Volume: 1
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(85)90092-8

✦ Synopsis

The temperature dependence of the radiative recombination coefficient of GaAs-(A1,Ga)As quantum wells grown by MO-VPE was investigated. This was done by measuring the minority carrier lifetime as deduced from photoluminescence decay. The experimental lifetime varies as Ta, where a equals 1.1 for small well thicknesses (66A) and increases gradually to 1.4 for a well thickness of 3OOA. This is in good agreement with simple theoretical considerations,