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Exchange splitting of light hole excitons in Al1−χGaχAs-GaAs quantum wells

✍ Scribed by Martin W. Berz; Lucio Claudio Andreani; Edgar F. Steigmeier; Franz-Karl Reinhart

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
320 KB
Volume
80
Category
Article
ISSN
0038-1098

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We studied the optical properties of GaAs/Al 0X35 Ga 0X65 As asymmetric double quantum wells at T 4X2 K and in the presence of in-plane magnetic fields up to 20 T. In an electric field F 8 45 kV/cm, electrons and holes are respectively confined in the wide and narrow well and form spatially indirect