Temperature dependence of the radiative
Temperature dependence of the radiative recombination coefficient in GaAs๎ธ(Al, Ga)As quantum wells
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G.W. 't Hooft; M.R. Leys; H.J. Talen-v.d. Mheen
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Article
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1985
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Elsevier Science
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English
โ 281 KB
The temperature dependence of the radiative recombination coefficient of GaAs-(A1,Ga)As quantum wells grown by MO-VPE was investigated. This was done by measuring the minority carrier lifetime as deduced from photoluminescence decay. The experimental lifetime varies as Ta, where a equals 1.1 for sma