๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Temperature dependence of the radiative recombination coefficient in silicon

โœ Scribed by Schlangenotto, H. ;Maeder, H. ;Gerlach, W.


Publisher
John Wiley and Sons
Year
1974
Tongue
English
Weight
678 KB
Volume
21
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Temperature dependence of the radiative
โœ G.W. 't Hooft; M.R. Leys; H.J. Talen-v.d. Mheen ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 281 KB

The temperature dependence of the radiative recombination coefficient of GaAs-(A1,Ga)As quantum wells grown by MO-VPE was investigated. This was done by measuring the minority carrier lifetime as deduced from photoluminescence decay. The experimental lifetime varies as Ta, where a equals 1.1 for sma