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The Safe Operating Area of GaAs-Based Heterojunction Bipolar Transistors

✍ Scribed by Chien-Ping Lee; Chau, F.H.F.; Ma, W.; Wang, N.L.

Book ID
114618488
Publisher
IEEE
Year
2006
Tongue
English
Weight
967 KB
Volume
53
Category
Article
ISSN
0018-9383

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This work describes an approach for small signal modelling of GaAs-based ( ) ( heterojunction bipolar transistors HBTs for low-voltage r r r r r high-power application i.e., 4 2 ) V s 3 V, J s 3 = 10 A r r r r r cm . The parameter extraction procedure is discussed in ce c detail. Furthermore, it is