The role of surface roughness on the electron confinement in semiconductor quantum rings
β Scribed by A. Chaves; J. Costa e Silva; J.A.K. Freire; G.A. Farias
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 512 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0026-2692
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β¦ Synopsis
The electron energy spectrum of GaAs=Al 0:30 Ga 0:70 As quantum rings under applied magnetic fields is calculated, taking into account the existence of rough interfaces between materials. The Schro¨dinger equation, within the effective mass approximation, is solved in a realistic model, not limited to small perturbations. Our numerical results show that the existence of roughness on the ring surface modifies significantly the electron confinement energy, lifts the degeneracy of the electron angular momentum transition points of the Aharonov-Bohm oscillations, and in some special cases, it can even suppress the ground state energy oscillations.
π SIMILAR VOLUMES
Polaronic corrections are calculated for a semiconductor quantum-well heterostructure at T = 0 K. Electron coupling with confined LO-phonons is assumed on the basis of an electron-LO-phonon model Hamiltonian deduced in a previous work. Screening is ignored during the calculations, a parabolic band s