LO-phonon confinement effects on the polaron properties in semiconductor quantum-well heterostructures

✍ Scribed by F. Comas; C. Trallero-Giner; R. Riera

• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 455 KB
• Volume: 154
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(88)90013-0

✦ Synopsis

Polaronic corrections are calculated for a semiconductor quantum-well heterostructure at T = 0 K. Electron coupling with confined LO-phonons is assumed on the basis of an electron-LO-phonon model Hamiltonian deduced in a previous work. Screening is ignored during the calculations, a parabolic band structure is supposed and the case of completely confined electrons with infinite potential barriers at the interfaces is considered. Finite values for the electron self-energies are obtained. Dependence of polaronic corrections on the quantum-well parameters is discussed in detail and comparison with other works on the subject is made. Good agreement with experimental data is found for the case of a GaAs-AI/Ga1_~As quantum well.