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The role of excess arsenic during the metalorganic molecular beam epitaxial growth of GaAs from trimethylgallium and As2

โœ Scribed by T. Kaneko; O. Naji; T.S. Jones; B.A. Joyce


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
450 KB
Volume
136
Category
Article
ISSN
0022-0248

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