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New damage-free patterning method of a GaAs oxide mask and GaAs selective growth using the metalorganic molecular beam epitaxy method

✍ Scribed by Seikoh Yoshida; Masahiro Sasaki


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
460 KB
Volume
133
Category
Article
ISSN
0022-0248

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