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The role of boron impurity in the activation of free charge carriers in layers of porous silicon during the adsorption of acceptor molecules

✍ Scribed by L. A. Osminkina; E. A. Konstantinova; K. S. Sharov; P. K. Kashkarov; V. Yu. Timoshenko

Book ID
110141423
Publisher
Springer
Year
2005
Tongue
English
Weight
62 KB
Volume
39
Category
Article
ISSN
1063-7826

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✍ Konstantinova, E. A. ;Osminkina, L. A. ;Sharov, C. S. ;Timoshenko, V. Yu. ;Kashk πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 283 KB

## Abstract The effect of nitrogen dioxide (NO~2~) adsorption on free charge carriers and spin centers in porous silicon has been studied by FTIR and ESR spectroscopy. The silicon dangling bond (__P__~b1~‐center) density rises with increasing NO~2~ pressure (__P__) while free charge carrier concent