Influence of NO2molecule adsorption on free charge carriers and spin centers in porous silicon

✍ Scribed by Konstantinova, E. A. ;Osminkina, L. A. ;Sharov, C. S. ;Timoshenko, V. Yu. ;Kashkarov, P. K.

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 283 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200461193

✦ Synopsis

Abstract

The effect of nitrogen dioxide (NO~2~) adsorption on free charge carriers and spin centers in porous silicon has been studied by FTIR and ESR spectroscopy. The silicon dangling bond (P~b1~‐center) density rises with increasing NO~2~ pressure (P) while free charge carrier concentration depends on P nonmonotonically. The experimental results are explained by a microscopic model taking into account both the formation of P–(NO~2~)^–^ donor–acceptor pairs and NO~2~‐induced oxidation of Si nanocrystal surfaces. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)