Influence of NO2molecule adsorption on f
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Konstantinova, E. A. ;Osminkina, L. A. ;Sharov, C. S. ;Timoshenko, V. Yu. ;Kashk
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Article
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2005
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John Wiley and Sons
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English
β 283 KB
## Abstract The effect of nitrogen dioxide (NO~2~) adsorption on free charge carriers and spin centers in porous silicon has been studied by FTIR and ESR spectroscopy. The silicon dangling bond (__P__~b1~βcenter) density rises with increasing NO~2~ pressure (__P__) while free charge carrier concent