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The resonance frequency dependence on the doping level of 1.3-µm InGaAsP lasers

✍ Scribed by Chin Bing Su; Lanzisera, V.A.

Book ID
114595311
Publisher
IEEE
Year
1985
Tongue
English
Weight
211 KB
Volume
32
Category
Article
ISSN
0018-9383

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✍ A. F. Phillips; S. J. Sweeney; A. R. Adams; P. J. A. Thijs 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 191 KB 👁 1 views

We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3 mm semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases.