The relationship between stress and photoluminescence of Cd0.96Zn0.04Te single crystal
โ Scribed by Dongmei Zeng; Wanqi Jie; Tao Wang; Wenwei Li; Jijun Zhang
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 286 KB
- Volume
- 142
- Category
- Article
- ISSN
- 0921-5107
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๐ SIMILAR VOLUMES
Dislocations were introduced into CdZnTe wafers by the means of bending deformation at an elevated temperature. The average IR transmittance of CdZnTe wafers was found to be decreased to 44% after deformation from 64% before. The polarization absorption of dangling-bond electrons in dislocations sho
Cd 0.96 Zn 0.04 Te thin films are deposited onto well cleaned glass substrates (Corning 7059) kept at room temperature by vacuum evaporation and the films are annealed at 423 K. Rutherford Backscattering Spectrometry and X-ray diffraction techniques are used to determine the thickness, composition a