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The effect of dislocations in Cd0.96Zn0.04Te single crystal on IR transmittance

✍ Scribed by Gangqiang Zha; Wanqi Jie; Qiang Li; Zewen Wang; Yadong Xu; Dongmei Zeng

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
120 KB
Volume
9
Category
Article
ISSN
1369-8001

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πŸ“œ SIMILAR VOLUMES

Dislocation-induced IR absorption and ph
Dislocation-induced IR absorption and photoluminescence emission in Cd0.96Zn0.04Te
✍ Gangqiang Zha; Wanqi Jie; Tingting Tan; Linghang Wang; Dongmei Zeng πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 136 KB

Dislocations were introduced into CdZnTe wafers by the means of bending deformation at an elevated temperature. The average IR transmittance of CdZnTe wafers was found to be decreased to 44% after deformation from 64% before. The polarization absorption of dangling-bond electrons in dislocations sho