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The relationship between hydrogen and electronic defects in amorphous silicon

✍ Scribed by S.C. Deane; M.J. Powell


Book ID
115990875
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
504 KB
Volume
198-200
Category
Article
ISSN
0022-3093

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Electron deep-trapping mobility-lifetime (/~r) products were measured in a series of hydrogenated amorphous silicon (a-Si:H) specimens using the transient photocurrent charge-collection technique. A logarithmic dependence of the resulting /~r estimate upon the collection time was observed. The corre