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The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−x As/In0.52Al0.48As (0≤x≤0.32) modulation-doped field-effect transistors to molecular-beam epitaxial growth modes

✍ Scribed by Pamulapati, J.; Lai, R.; Ng, G. I.; Chen, Y. C.; Berger, P. R.; Bhattacharya, P. K.; Singh, J.; Pavlidis, D.

No coin nor oath required. For personal study only.

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