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The quantum Hall effect in a widep-Ge1−xSix/Ge/p-Ge1−xSixpotential well

✍ Scribed by Yu. G. Arapov; V. N. Neverov; G. I. Kharus; N. G. Shelushinina; M. V. Yakunin; O. A. Kuznetsov


Book ID
110119836
Publisher
Springer
Year
1998
Tongue
English
Weight
148 KB
Volume
32
Category
Article
ISSN
1063-7826

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Quantum hall effect in Ge1-XSiX/(111)Ge
✍ B.A. Aronzon; A.L. Chernov; L. Essaleh; J. Galibert; J. Leotin; O.A. Mironov 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 244 KB

We investigate the Quantum Hall Effect (QHE) in selectively boron-doped \(\mathrm{GeSi} /(111) \mathrm{Ge}\) multi-quantum well (MQW) samples of non standard geometry with six-point contacts disconnected from the sample edges. The Hall resistance shows a well-pronounced quantisation that is consiste