Quantum hall effect in Ge1-XSiX/(111)Ge MQW samples of non-standard six-point contact geometry
✍ Scribed by B.A. Aronzon; A.L. Chernov; L. Essaleh; J. Galibert; J. Leotin; O.A. Mironov
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 244 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
We investigate the Quantum Hall Effect (QHE) in selectively boron-doped (\mathrm{GeSi} /(111) \mathrm{Ge}) multi-quantum well (MQW) samples of non standard geometry with six-point contacts disconnected from the sample edges. The Hall resistance shows a well-pronounced quantisation that is consistent with integral QHE (IQHE) value (\left(\mathrm{h} / v \mathrm{ve}^{2}\right)) at temperature (\mathrm{T}=4.2 \mathrm{~K}). When the temperature was lower than (2.5 \mathrm{~K}), unusual peaks on the (\mathrm{R}_{\mathrm{xy}} \mathrm{QHE}) plateaux were observed. We explain this behaviour by non-equilibrium population of Landau levels that results from the separation of current contacts from the edge of the sample. (C) 1995 Academic Press Limited