We investigate the Quantum Hall Effect (QHE) in selectively boron-doped \(\mathrm{GeSi} /(111) \mathrm{Ge}\) multi-quantum well (MQW) samples of non standard geometry with six-point contacts disconnected from the sample edges. The Hall resistance shows a well-pronounced quantisation that is consiste
β¦ LIBER β¦
Quantum hall effect in selectively doped strained p-Ge/Ge1-xSix superlattices
β Scribed by B.A. Aronzon; N.K. Chumakov; J. Leotin; J. Galibert; L. Essaleh; A.L. Chernov; O.A. Kuznetsov; L.K. Orlov; R.A. Rubtsova; O.A. Mironov
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 207 KB
- Volume
- 13
- Category
- Article
- ISSN
- 0749-6036
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