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The Progress of YMnO 3 /Y 2 O 3 /Si System for a Ferroelectric Gate Field Effect Transistor

✍ Scribed by Fujimura, Norifumi; Ito, Daisuke; Ito, Taichro

Book ID: 126576927
Publisher: Taylor and Francis Group
Year: 2002
Tongue: English
Weight: 226 KB
Volume: 271
Category: Article
ISSN: 0015-0193
DOI: 10.1080/00150190211525

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