๐”– Bobbio Scriptorium
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The present state of the art in high-power semiconductor devices

โœ Scribed by Satoh, K.; Yamamoto, M.


Book ID
119782111
Publisher
IEEE
Year
2001
Tongue
English
Weight
236 KB
Volume
89
Category
Article
ISSN
0018-9219

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๐Ÿ“œ SIMILAR VOLUMES


Semiconductor Power Devices
โœ Bowler, P. ๐Ÿ“‚ Article ๐Ÿ“… 1978 ๐Ÿ› The Institution of Electrical Engineers โš– 208 KB
State of the art of high temperature pow
โœ Cyril Buttay; Dominique Planson; Bruno Allard; Dominique Bergogne; Pascal Bevila ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 387 KB

High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500 โ€ข C, whereas silicon is limited to 150-200 โ€ข C. Applications such as transportation or a deep oil